A study of the specific contact resistance and channel resistivity of amorphous IZO thin film transistors with IZO source–drain metallization

标题
A study of the specific contact resistance and channel resistivity of amorphous IZO thin film transistors with IZO source–drain metallization
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 109, Issue 6, Pages 063702
出版商
AIP Publishing
发表日期
2011-03-18
DOI
10.1063/1.3549810

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