4.6 Article

Nucleation of ReBa2Cu3Ox (Re = rare-earth) during high-rate metal-organic chemical vapor deposition growth

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JOURNAL OF APPLIED PHYSICS
卷 110, 期 12, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.3670030

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  1. Brookhaven Science Associates, LLC [DE-AC02-98CH10886]
  2. U.S. Department of Energy
  3. U.S. Department of Energy, Office of Basic Energy Sciences
  4. New York State Energy Research and Development Authority (NYSERDA) [NF-10-21 VFS)]
  5. U.S. Department of Energy, Office of Basic Energy Science, Materials Sciences and Engineering Division (QL)

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Large-scale, high-rate epitaxial growth technology for the second-generation superconducting wire brings unique technological challenges for the thin-film coating industry. One of the most difficult steps of the process is controlling nucleation of a complex compound over a km-long low-cost oxide template. Here, we analyze early stages of industrial-scale epitaxial metal organic chemical vapor deposition (MOCVD) growth of ReBa2Cu3Ox (REBCO, Re=rare-earth) on buffered metal substrates. The nucleation event is detected by high-flux synchrotron X-ray diffraction and confirmed by atomic force microscopy. REBCO nuclei exhibit a strong preference for edges of the buffer grain, indicating that (001) steps of the buffer grains are preferred nucleation sites. It is concluded that random nucleation of REBCO is caused by agglomerates of small buffer grains. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3670030]

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