期刊
JOURNAL OF APPLIED PHYSICS
卷 110, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3642955
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资金
- Guangdong-Hong Kong Technology Cooperation Funding Scheme [2009498A2202]
The luminescence properties of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with different quantum-well (QW) thicknesses were investigated. It is found that with decreasing the QW thicknesses, the integrated intensities of the photoluminescence (PL) and electroluminescence (EL) peaks demonstrate a contrary changing trend. The PL results show that the luminescence efficiency is improved by using thinner QWs. However, in the EL process, such a positive effect is counteracted by the low carrier injection efficiency in the thin QW LEDs, and consequently leads to a lower light output. Based on our experimental results, it is inferred that the tunneling leakage current associated with dislocations should be responsible for the low carrier-injection efficiency and the observed weaker EL integrated intensity of the LEDs with thin QWs. (c) 2011 American Institute of Physics. [doi: 10.1063/1.3642955]
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