Review
Chemistry, Multidisciplinary
Paramaguru Ganesan, Hoi Nok Tsao, Peng Gao
Summary: Organic light-emitting transistors (OLETs) combine the switching functionality of field-effect transistors (FETs) with the light-emitting characteristics of organic light-emitting diodes (OLEDs) to simplify device architecture for flat panel and flexible display technology. Key tactics include improving electrode design, utilizing vertical architecture for short channel lengths and high aperture ratios, and incorporating high–k dielectric materials to enhance device performance.
ADVANCED FUNCTIONAL MATERIALS
(2021)
Review
Chemistry, Physical
Caterina Soldano
Summary: Organic light emitting transistors (OLETs) are a new technology platform with dual functionality as thin-film transistors and light emitters. This Review emphasizes the importance of engineering gate dielectrics to enhance device properties, focusing on using this layer as an active tool for light manipulation in optoelectronic devices.
Article
Optics
Ting Jiang, Yiru Wang, Wanxin Huang, Haifeng Ling, Guofeng Tian, Yunfeng Deng, Yanhou Geng, Deyang Ji, Wenping Hu
Summary: This study introduces carboxyl groups into polymer dielectrics to achieve high device mobility and optical figures of merit at a low operating voltage. It also improves image sensing and memory capabilities.
LIGHT-SCIENCE & APPLICATIONS
(2023)
Article
Chemistry, Multidisciplinary
Tung Nguyen-Dang, Sangmin Chae, Jirat Chatsirisupachai, Hiba Wakidi, Vinich Promarak, Yon Visell, Thuc-Quyen Nguyen
Summary: This study reports an organic reconfigurable logic gate based on dual-mode organic electrochemical transistors. The gate has a simple structure and design, low power consumption, and can operate in both depletion mode and enhancement mode. Mode switching is achieved by altering the polarity of the applied gate and drain voltages.
ADVANCED MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Hyeok-jin Kwon, Heqing Ye, Yonghwa Baek, Jisu Hong, Rixuan Wang, Yonghwan Choi, Ilgeum Lee, Chan Eon Park, Sooji Nam, Juyoung Kim, Se Hyun Kim
Summary: The novel fluorinated organic-inorganic hybrid material FAGPTi, synthesized successfully, exhibits long-term colloidal stability and excellent flexibility and insulating properties in OTFTs as a gate dielectric layer. Introducing a fluorinated precursor results in stable spherical composites with strong repulsive forces, allowing for efficient fabrication of electronic materials and devices with highly stable driving characteristics under severe bending conditions.
ADVANCED FUNCTIONAL MATERIALS
(2021)
Article
Nanoscience & Nanotechnology
Xiaowu Tang, Yohan Jo, Hyeok-Jin Kwon, Kaibin Wu, Zhijun Li, Seonghyeon Kim, Chan Eon Park, Tae Kyu An, Jihoon Lee, Se Hyun Kim
Summary: In this study, printable polymer series were synthesized and used as gate dielectrics for OTFTs. The effect of different polymer types on the driving stability of OTFTs was analyzed, with PFS-co-PVBCi (3:7) showing the best performance under continuous bias stress with almost negligible Vth shift. This research successfully implemented flexible OTFT and logic devices using printed PFS-co-PVBCi (3:7) dielectrics with stable operation properties.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Chemistry, Multidisciplinary
Heqing Ye, Hyeok-jin Kwon, Su Cheol Shin, Hwi-young Lee, Young Ho Park, Xiaowu Tang, Ruxian Wang, Kanghyuck Lee, Jisu Hong, Zhijun Li, Wonkyo Jeong, Jiyeong Kim, Chan Eon Park, Jihoon Lee, Tae Kyu An, Insik In, Se Hyun Kim
Summary: This study demonstrates a novel strategy to induce high-k characteristics with durable polysilsesquioxane (PSQ)-based dielectrics, paving the way for the production of practical and printable high-k dielectrics for low-voltage-operating high-performance organic field-effect transistors (OFETs). Different PSQs exhibit distinct polarization phenomena, leading to different hysteresis behaviors during device operation.
ADVANCED FUNCTIONAL MATERIALS
(2022)
Article
Nanoscience & Nanotechnology
Baotieliang Wang, Ting Xu, Bo Yu, Jiawei Zou, Shifang Luan
Summary: In this study, the performance of organic thin-film transistors (OTFTs) was improved by modifying the alkyl side chain length of polyimide (PI) materials. The OTFTs exhibited high mobility, low operating voltage, hysteresis-free behavior, and high operational stability.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Multidisciplinary
Yusheng Chen, Hanlin Wang, Yifan Yao, Ye Wang, Chun Ma, Paolo Samori
Summary: A new type of long-afterglow organic light-emitting transistors (LAOLETs) has been developed, utilizing a photoinduced synaptic effect in an inorganic indium-gallium-zinc-oxide (IGZO) semiconductor channel layer. This allows for persistent electroluminescence in organic light-emitting materials, with the LAOLETs integrated into active-matrix light-emitting arrays functioning as visual UV sensors capable of long-lifetime green-light emission in irradiated regions.
ADVANCED MATERIALS
(2021)
Article
Chemistry, Physical
Yuanwei Zhu, Nan Qiao, Shuqi Dong, Guanghao Qu, Yu Chen, Wanlong Lu, Zongze Qin, Dongfan Li, Kangning Wu, Yongjie Nie, Bo Liu, Shengtao Li, Guanghao Lu
Summary: In this study, a series of fluorinated polystyrene isomers were designed through side-chain engineering. By enhancing molecular charge separation and electrostatic potential, the dielectric constant and charge trapping performance were improved, leading to enhanced photon memory and artificial synapse performance.
CHEMISTRY OF MATERIALS
(2022)
Article
Chemistry, Physical
Sandeep Kumar Ojha, Brijesh Kumar
Summary: This paper discusses a detailed comparison among SG-OLET, DG-OLET, and C-OLET, with DG-OLET showing significantly higher performance than SG-OLET, while C-OLET is approximately comparable. Additionally, QDs-based OLETs exhibit higher drive currents compared to pentacene OSC-based devices. Detailed discussions on Coulomb blockade and single electron tunneling phenomena are provided.
Article
Chemistry, Physical
Ryun Na Kim, Hye Won Yun, Jinho Lee, Woo-Byoung Kim
Summary: Analysis of the interfacial and electrical properties of Al2O3/SiO2/Si revealed that the thickness of the SiO2 layer affects interfacial defects and suboxide density, which in turn impacts dipole and flat-band voltage. Additionally, variations in SiO2 layer thickness result in differences in slow state density, fixed oxide charge density, and interface state density. Postmetallization annealing (PMA) further reduces these densities. As the thickness of the SiO2 layer increases, the flat-band voltages decrease after PMA, indicating a reduction in interfacial defects and suboxides.
JOURNAL OF PHYSICAL CHEMISTRY C
(2021)
Review
Chemistry, Analytical
Seongjae Kim, Hocheon Yoo
Summary: Thin-film transistors have advantages in processing, but most research is still focused on unit devices. This review examines digital and analog thin-film circuits using different materials and discusses integration and key issues.
Article
Nanoscience & Nanotechnology
Gergely Tarsoly, Youngill Choi, Young Gyu You, Sung Ho Jhang, Seungmoon Pyo
Summary: Most organic thin film-based phototransistors exhibit increased current under illumination due to trapped photogenerated minority charge carriers, but with a unique active layer structure, abnormal photoresponse behaviors can occur: hole-dominated current decreases under illumination and shows an anomalous dependence on irradiance. The current decreases with increasing irradiance, until a moderate current increase is observed. Under a constant negative bias, turning on a discrete light pulse sharply decreases the current, which slowly increases to saturation before rising again when illumination ceases. These anomalies are modeled using a mathematical model based on trapping and releasing photogenerated holes and electrons simultaneously.
ADVANCED ELECTRONIC MATERIALS
(2021)
Article
Chemistry, Multidisciplinary
Meili Xu, Changbin Zhao, Zhimin Meng, Hao Yan, Hongming Chen, Zhixiang Jiang, Zhuonan Jiang, Hong Chen, Lingqiang Meng, Wei Hui, Zhenhuang Su, Yueyue Wang, Zhenhui Wang, Jianing Wang, Yuanhong Gao, Yaowu He, Hong Meng
Summary: In the field of AMOLED, the demand for higher integration density of driver chips has increased due to large-size and ultra-high-definition applications. Traditional technology of scaling down device dimension to improve integration density is facing challenges as Moore's Law approaches the limit. This article introduces a novel Fe-OLET device that integrates switching, light-emitting, and nonvolatile memory functions into a single device, achieving improved field-effect mobility and luminance.
ADVANCED MATERIALS
(2023)
