期刊
JOURNAL OF APPLIED PHYSICS
卷 110, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3622618
关键词
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资金
- Ministry of Sciences and Technology [2007C B924901, 2011CB921803]
- NSFC [60821092, 60990312, 61076060, 11004211]
- PCSIRT
- Science and Technology Commission of Shanghai Municipality [10JC1404600]
Graphene is believed to be a promising candidate for spintronic applications. In this study, we investigate the electronic, magnetic, and, especially, spintronic properties of graphene films grown on Ni(111) substrate using relativistic density-functional calculations. Enhanced Rashba spin-orbit coupling (SOC), with a magnitude of up to 20 meV-several orders of magnitude larger than the intrinsic SOC strength in freestanding graphene-is found at the graphene-Ni(111) interface. The hybridization between graphene's p(z) states and Ni's 3d states magnetizes the interfacial carbon atoms and induces a sizable exchange splitting in the p band of the graphene sheet. The calculated results agree well with the recently reported experimental data and provide a deep understanding of the spintronic behavior of graphene in contact with a 3d-ferromagnet. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3622618]
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