期刊
JOURNAL OF APPLIED PHYSICS
卷 108, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3481442
关键词
atomic force microscopy; Fourier transform spectra; infrared spectra; ion beam assisted deposition; Raman spectra; solid-state phase transformations; stoichiometry; titanium compounds; ultraviolet photoelectron spectra; wide band gap semiconductors; X-ray photoelectron spectra
资金
- Fapesp [05/53926]
- ANPCyT [PICT-0633973]
- CONICET [PIP 2533]
- UBACyT [X-003]
A comprehensive study of nonstoichiometry titanium oxide thin films (TiOx, 0.3 <= x <= 2) prepared by ion beam deposition technique is reported. The physical properties of the material are studied by ultraviolet and x-ray photoelectron, Raman, and Fourier transform infrared spectroscopies, and atomic force microscopy. An abrupt transition from metallic characteristics to a wide gap semiconductor is observed in a very narrow range of oxygen variation. Concomitantly with this change the crystal structure and morphology suffer remarkable physical properties modifications. This transformation is ascribed to surface-volume energy minimization due to the influence of oxygen determining the size of the TiO2 particles during coalescence. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3481442]
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