Theoretical simulations of the effects of the indium content, thickness, and defect density of the i-layer on the performance of p-i-n InGaN single homojunction solar cells

Fabrication and characterization of InGaN p-i-n homojunction solar cell

(2009) Xiao-mei Cai et al.   APPLIED PHYSICS LETTERS

When group-III nitrides go infrared: New properties and perspectives

(2009) Junqiao Wu   JOURNAL OF APPLIED PHYSICS

Temperature dependences of InxGa1−xN multiple quantum well solar cells

(2009) Ming-Jer Jeng et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

(2008) Carl J. Neufeld et al.   APPLIED PHYSICS LETTERS

High-quality InGaN∕GaN heterojunctions and their photovoltaic effects

(2008) Xinhe Zheng et al.   APPLIED PHYSICS LETTERS

Modeling of InGaN/Si tandem solar cells

(2008) L. Hsu et al.   JOURNAL OF APPLIED PHYSICS

Solar cell efficiency tables (version 33)

(2008) Martin A. Green et al.   PROGRESS IN PHOTOVOLTAICS

Luminescence mechanism and carrier dynamic studies of InGaN-based dichromatic light emitting diodes with ultraviolet and blue emissions

(2008) Shih-Wei Feng et al.   THIN SOLID FILMS