Different origins of the yellow luminescence in as-grown high-resistance GaN and unintentional-doped GaN films

标题
Different origins of the yellow luminescence in as-grown high-resistance GaN and unintentional-doped GaN films
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 107, Issue 2, Pages 023528
出版商
AIP Publishing
发表日期
2010-02-02
DOI
10.1063/1.3294965

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