Microwave-assisted transport via localized states in degenerately doped Si single electron transistors

Resonant microwave-assisted and dc transport are investigated in degenerately doped silicon single electron transistors. A model based on hopping via localized impurity states is developed and first used to explain both the dc temperature dependence and the ac response. In particular, the non-monotonic power dependence of the resonant current under irradiation is proved to be consistent with spatial Rabi oscillations between these localized states. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3467963]