期刊
JOURNAL OF APPLIED PHYSICS
卷 107, 期 11, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3428458
关键词
atomic force microscopy; metal-insulator transition; point defects
资金
- ANPCYT [PICT 06 2092, PICT 05 33304]
We have investigated the influence of point defect disorder in the electronic properties of manganite films. Real-time mapping of ion irradiated samples conductivity was performed through conductive atomic force microscopy (CAFM). CAFM images show electronic inhomogeneities in the samples with different physical properties due to spatial fluctuations in the point defect distribution. As disorder increases, the distance between conducting regions increases and the metal-insulator transition shifts to lower temperatures. Transport properties in these systems can be interpreted in terms of a percolative model. The samples saturation magnetization decreases as the irradiation dose increases whereas the Curie temperature remains unchanged. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3428458]
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