期刊
JOURNAL OF APPLIED PHYSICS
卷 105, 期 8, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3110184
关键词
elemental semiconductors; germanium; lattice dynamics; light polarisation; phonons; Raman spectra; red shift; silicon; spectral line shift; tensile strength
Raman shifts are investigated on silicon and germanium substrates under the uniaxial tensile strain on various substrate orientations. The strain splits the triply degenerate optical (LO, TO) phonons at the zone center (k approximate to 0). The redshifts of Si Raman peaks induced by the tensile strain on all substrate orientations are observed. With the specific polarization of the incident light, however, the unusual blueshifts of Ge Raman peaks induced by the tensile strain are observed on (110) and (111) Ge substrates. By using the suitable phenomenological constants and taking the Raman selection rules into consideration, the experimental results are in reasonable agreement with the lattice dynamical theory.
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