期刊
JOURNAL OF APPLIED PHYSICS
卷 105, 期 2, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3072707
关键词
dislocation loops; dislocation nucleation; elemental semiconductors; molecular dynamics method; nanostructured materials; plasticity; silicon; slip; stress effects
We performed molecular dynamics simulations of silicon nanostructures submitted to various stresses and temperatures. For a given stress orientation, a transition in the onset of silicon plasticity is revealed depending on the temperature and stress magnitude. At high temperature and low stress, partial dislocation loops are nucleated in the {111} glide set planes. But at low temperature and very high stress, perfect dislocation loops are formed in the other set of {111} planes called shuffle. This result confirmed by three different classical potentials suggests that plasticity in silicon nanostructures could be controlled by dislocation nucleation.
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