期刊
JOURNAL OF APPLIED PHYSICS
卷 105, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3087762
关键词
defect states; excitons; g-factor; II-VI semiconductors; magneto-optical effects; photoluminescence; polarisation; wide band gap semiconductors; zinc compounds
资金
- Council of HKSAR [603704, HKU 7056/06P]
A series of bound exciton transitions of a bulk ZnO sample has been studied by high resolution magnetophotoluminescence spectra. Ten sharp intense bound exciton emissions are classified into three groups according to their dependences on magnetic field, angle, and circular polarization of the emission lines. The charge states of the defect centers and exciton types are identified. The effective g factors of the electrons and holes are determined.
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