Switching mechanism transition induced by annealing treatment in nonvolatile Cu/ZnO/Cu/ZnO/Pt resistive memory: From carrier trapping/detrapping to electrochemical metallization

标题
Switching mechanism transition induced by annealing treatment in nonvolatile Cu/ZnO/Cu/ZnO/Pt resistive memory: From carrier trapping/detrapping to electrochemical metallization
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 106, Issue 12, Pages 123705
出版商
AIP Publishing
发表日期
2009-12-30
DOI
10.1063/1.3273329

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