Effect of annealing on charge transfer in Ge nanocrystal based nonvolatile memory structure

标题
Effect of annealing on charge transfer in Ge nanocrystal based nonvolatile memory structure
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 106, Issue 10, Pages 103701
出版商
AIP Publishing
发表日期
2009-11-17
DOI
10.1063/1.3259396

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