4.6 Article

Metal-insulator transition in ferromagnetic Mn-doped CuO thin films

期刊

JOURNAL OF APPLIED PHYSICS
卷 105, 期 8, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.3116508

关键词

copper compounds; electric properties; ferromagnetic materials; ferromagnetic-paramagnetic transitions; magnetic susceptibility; magnetic thin films; manganese; metal-insulator transition

资金

  1. Ministry of Education of China [20050008028]
  2. National Natural Science Foundation of China [50472092, 50672008, 2007CB936202]
  3. NSF DMR [0405136]
  4. DOE [DE-FG02-07ER46374]
  5. Division Of Materials Research
  6. Direct For Mathematical & Physical Scien [0405136] Funding Source: National Science Foundation

向作者/读者索取更多资源

The ac susceptibility, electrical properties, and magnetotransport properties of the as-prepared MnxCu1-xO thin films (x=7%-29%) were studied in the temperature range of 2-300 K. The susceptibility measurement shows that ferromagnetic transition takes place for the samples with x >= 14% below 100 K. The transport properties show the transition from variable-range-hopping to metalliclike behavior at the same transition temperature as the paramagnetism to ferromagnetism transition. The metal-insulator transition is a characteristic feature of magnetic ordering in this material.

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