Microstructure and origin of dislocation etch pits in GaN epilayers grown by metal organic chemical vapor deposition

标题
Microstructure and origin of dislocation etch pits in GaN epilayers grown by metal organic chemical vapor deposition
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 104, Issue 12, Pages 123525
出版商
AIP Publishing
发表日期
2008-12-23
DOI
10.1063/1.3042230

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