期刊
JOURNAL OF APPLIED PHYSICS
卷 104, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3041622
关键词
aluminium; annealing; conduction bands; Fermi level; indium; IV-VI semiconductors; metallisation; ohmic contacts; semiconductor device metallisation; semiconductor thin films; silver; thermal stability; tin; tin compounds; valence bands
Selection of Ohmic contacts to SnS films is one of the crucial tasks for the fabrication of efficient SnS devices. Thus, we examined different nonalloyed metallization schemes, namely, Ag, Al, In, and Sn to SnS films since their Fermi level pins exactly in between the conduction and valance bands of SnS. To explore the Ohmic behavior of M/SnS (M=Ag, Al, In, Sn) structures, the electrical properties of as-grown structures have been studied at different temperatures. From these studies it is noticed that at room temperature all M/SnS structures, except Ag/SnS, have an excellent Ohmic behavior over the voltage range from -10 to 10 V. However, Ag/SnS structures showed Ohmic trend only in the voltage range of +/- 6 V. The stability of the M/SnS structures was also examined by annealing them at different temperatures (300-500 degrees C) and the obtained peculiar results are reported.
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