期刊
JOURNAL OF APPLIED PHYSICS
卷 104, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.2969769
关键词
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资金
- Danish Ministry of Science, Technology and Innovation
- Leverhulme Foundation
The room temperature conductance of Bi(111) was measured using microscopic four point probes with a contact spacing down to 500 nm. The conductance is remarkably similar to that of the bulk, indicating that surface scattering is not a major mechanism for restricting the mobility at this length scale. Also, the high density of electronic surface states on Bi(111) does not appear to have a major influence on the measured conductance. The lower limit for the resistivity due to electronic surface states is found to be around 5 Omega. With such a value for the surface resistivity, surface conduction should not be a significant factor to inhibit the observation of the predicted semiconductor to semimetal transition for thin films of Bi. (C) 2008 American Institute of Physics.
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