期刊
JOURNAL OF APPLIED PHYSICS
卷 104, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.2973463
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资金
- Russian Foundation for Basic Research [07-02-00408a, 05-02-08015-ofi-p]
- ISTC [3029]
- NSF [DMR 070416]
- U.S. Department of Defense [W911-QX-06C0083, W911-NF-06C0190]
The electrical and structural properties of AlN/GaN heterostructures grown by molecular beam epitaxy on sapphire are compared with those of AlGaN/GaN heterostructures. The structural characteristics as assessed by x-ray diffraction show little difference but the electron density in the two-dimensional electron gas is about twice higher for AlN/GaN structures with only slightly lower mobility than in AlGaN/GaN. By proper choice of the Fe doping in GaN(Fe) and the thickness of unintentionally doped GaN layers, the composite buffer of the structure can be Made semi-insulating. The current through the AlN/GaN structures is determined by tunneling through the AlN barrier and is much higher than that for AlGaN/GaN films due to the lower thickness of AlN compared to AlGaN. Increasing the thickness of AlN from 3 to 4 mn decreases the leakage current by about an order of magnitude. (C) 2008 American Institute of Physics.
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