期刊
JOURNAL OF APPLIED PHYSICS
卷 104, 期 10, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3021354
关键词
barium compounds; coercive force; dielectric hysteresis; dielectric polarisation; dislocation density; electric domains; ferroelectric thin films
资金
- Laboratory-Directed Research and Development Program under DOE
- NSF [DMR0507146, DMR-0820404]
- Department of Energy [DE-FG02-07ER46417]
- U.S. Department of Energy (DOE) [DE-FG02-07ER46417] Funding Source: U.S. Department of Energy (DOE)
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [820404] Funding Source: National Science Foundation
We investigated the influence of dislocations, located at the interface of a ferroelectric film and its underlying substrate, on the ferroelectric hysteresis loop including the remanent polarization and coercive field using phase-field simulations. We considered epitaxial ferroelectric BaTiO3 films and found that the hysteresis loop is strongly dependent on the type and density of interfacial dislocations. The dislocations that stabilize multiple ferroelectric variants and domains reduce the coercive field, and consequently, the corresponding remanent polarization also decreases.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据