期刊
JOURNAL OF APPLIED PHYSICS
卷 104, 期 7, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.2976348
关键词
-
资金
- NSF-EPSCOR
- [DoD-W911NF-06-1- 0030]
- [W911NF-06-1-0183]
We report the fabrication of PbZr0.57Ti0.43O3 (PZT) thin films with preferential growth along (111) and random crystalline orientation on the platinized silicon substrates using pulsed laser deposition technique. X-ray diffraction patterns and surface morphology indicate increase in grain size and nucleation, which support better perovskite matrix with increase in annealing temperature. We observed large dielectric constant (similar to 4000) and enhanced remanent polarization 70 mu C/cm(2) at room temperature attributed to grain growth and intermetallic Pt-Pb transient phase. Frequency dependent polarization showed minor reduction in polarization above 10 kHz frequencies. Normalized fatigue characteristic of PZT thin films showed minimal 25% degradation in remanent polarization after 10(9) cycles, which may be useful for memory devices. ac conductivity spectra illustrated that anomaly near the phase transition temperature with activation energy (E-a similar to 0.60-0.75 eV) supports the intrinsic nature of ferroelectric phase transition. (c) 2008 American Institute of Physics. [DOI: 10.1063/1.2976348]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据