HfO2 gate dielectric on (NH4)2S passivated (100) GaAs grown by atomic layer deposition

标题
HfO2 gate dielectric on (NH4)2S passivated (100) GaAs grown by atomic layer deposition
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 103, Issue 3, Pages 034106
出版商
AIP Publishing
发表日期
2008-02-08
DOI
10.1063/1.2838471

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