Characterization of plasma etching damage on p-type GaN using Schottky diodes

标题
Characterization of plasma etching damage on p-type GaN using Schottky diodes
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 103, Issue 9, Pages 093701
出版商
AIP Publishing
发表日期
2008-05-04
DOI
10.1063/1.2908227

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