Effects of surface treatments using O3 and NH3 on electrical properties and chemical structures of high-k HfO2 dielectric films on strained Si1−xGex∕Si substrates

标题
Effects of surface treatments using O3 and NH3 on electrical properties and chemical structures of high-k HfO2 dielectric films on strained Si1−xGex∕Si substrates
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 103, Issue 8, Pages 084117
出版商
AIP Publishing
发表日期
2008-04-25
DOI
10.1063/1.2907869

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