Article
Chemistry, Multidisciplinary
Ziyuan Li, Simeon Trendafilov, Fanlu Zhang, Monica S. Allen, Jeffery W. Allen, Sukrith U. Dev, Wenwu Pan, Yang Yu, Qian Gao, Xiaoming Yuan, Inseok Yang, Yi Zhu, Anha Bhat, Sherry X. Peng, Wen Lei, Hark Hoe Tan, Chennupati Jagadish, Lan Fu
Summary: This study demonstrates a highly compact, filter-free multispectral photodetector based on GaAs0.94Sb0.06 nanowire arrays, providing wavelength-selective light detection channels without using any optical filters. The photodetectors show high responsivity and detectivity, enabling high-resolution RGB color imaging.
Article
Instruments & Instrumentation
I. Shafir, D. C. Elias, D. Memram, N. Sicron, M. Katz
Summary: In this study, an innovative T2SL/InP/T2SL pBp structure was designed, fabricated and characterized. The device exhibited a cutoff wavelength of 2.3 μm at room temperature and 2.2 μm at 200K. At 200K, the device showed a low dark current density, while at room temperature it achieved a high quantum efficiency and specific detectivity. Therefore, these pBp detectors demonstrated their potential as extended short wavelength infrared detectors.
INFRARED PHYSICS & TECHNOLOGY
(2022)
Review
Materials Science, Multidisciplinary
Ziyuan Li, Zeyu He, Chenyang Xi, Fanlu Zhang, Longsibo Huang, Yang Yu, Hark Hoe Tan, Chennupati Jagadish, Lan Fu
Summary: In recent years, III-V semiconductor nanowires have been extensively studied for their applications in infrared photodetectors. This is due to their unique properties such as direct and suitable bandgap, flexibility in device design, and ability to grow on foreign substrates with more effective strain relaxation. Vertically aligned and ordered nanowire arrays have emerged as a promising platform for photodetectors, allowing for tailored light absorption and carrier transport properties. This article provides a comprehensive review of the progress in the development of various types of infrared photodetectors based on III-V semiconductor nanowire arrays, including the synthesis/fabrication methods, device performance, and emerging applications. The challenges and future perspectives for the development of low-cost, large-scale, high-performance nanowire array infrared photodetectors are also analyzed.
ADVANCED MATERIALS TECHNOLOGIES
(2023)
Review
Instruments & Instrumentation
Haonan Chen, Jingzhen Li, Shengzhu Cao, Wenjie Deng, Yongzhe Zhang
Summary: This review summarizes the operational principles of Indium Arsenide (InAs) nanowire photodetectors under different light conditions and the various approaches designed to optimize their performance. The exceptional optical and electrical characteristics of InAs nanowires make them potential candidates for next-generation optoelectronic devices. However, the surface states and defects of InAs nanowires lead to complex photoresponse mechanisms under different illumination conditions, thus greatly affecting their performance. Various approaches, including surface passivation, doping, and construction of heterojunctions, have been proposed to enhance their performance. This review categorizes and discusses these techniques, highlighting their advantages, limitations, and future prospects.
INFRARED PHYSICS & TECHNOLOGY
(2023)
Article
Nanoscience & Nanotechnology
Rabin Pokharel, Hirandeep Kuchoor, Mehul Parakh, Shisir Devkota, Kendall Dawkins, Priyanka Ramaswamy, Jia Li, Christopher Winkler, Lew Reynolds, S. Iyer
Summary: We present the first study on a GaAs/GaAsSb core-shell-configured nanowire-based avalanche photodiode (APD) operating in the near-infrared (NIR) region. The nanowires consist of GaAs and GaAs1-xSbx with tunable band gap serving as the multiplication and absorption layers, respectively. This study successfully adopts various techniques to enhance the performance of the APD, such as doping compensation and segment-wise annealing. The results demonstrate a high gain and responsivity, making this design promising for future nanowire photodiode applications.
ACS APPLIED NANO MATERIALS
(2023)
Article
Nanoscience & Nanotechnology
Shisir Devkota, Hirandeep Kuchoor, Kendall Dawkins, Rabin Pokharel, Mehul Parakh, Jia Li, Shanthi Iyer
Summary: In this study, a systematic design of growth experiments and subsequent characterization of GaAsSb heterostructure axial p-i-n nanowires on p-Si for ensemble photodetector application were presented. Various growth methods were explored to mitigate several growth challenges and improve the electrical and optical properties of the nanowires. The optimized GaAsSb axial p-i-n nanowires showed enhanced responsivity, detectivity, and reduced noise level, making them suitable for high-speed optoelectronic applications.
Article
Physics, Applied
Xueqi Bai, Peng Bai, Xiaohong Li, Siheng Huang, Xinran Lian, Wenjun Song, Zhiwen Shi, Wenzhong Shen, Yueheng Zhang
Summary: This study introduces two types of QWPs based on antenna-coupled microcavity structures, improving coupling efficiency and achieving high-performance multi-color THz detection.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Chemistry, Multidisciplinary
Xiaopan Song, Ting Zhang, Lei Wu, Ruijin Hu, Wentao Qian, Zongguang Liu, Junzhuan Wang, Yi Shi, Jun Xu, Kunji Chen, Linwei Yu
Summary: This research demonstrates a fabrication method for large-area stretchable electronics using silicon nanowire field effect transistors (SiNW-FETs). By utilizing the solid-liquid-solid mechanism, SiNW channels can be precisely grown onto elastomers and transferred onto large-area substrates. The SiNW-FETs exhibit high performance and stability, making them promising for future flexible display and wearable electronic applications.
Article
Nanoscience & Nanotechnology
Pravinraj Selvaraj, Shi-Jie Chen, Yu-Han Cheng, Ming-Han Chi, Sreeshyam Adat, Yu-Wu Wang
Summary: This study investigates the growth of ZnO nanowires on ZTO-based FETs to develop a superior photosensitive self-powered photodetector. The resulting device exhibits high sensitivity and long carrier lifetime. Highly sensitive photodetectors based on ZTO/ZnO NW transistors are expected to have critical applications in various fields.
ACS APPLIED NANO MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Yan Zhu, Qianhui Wei, Qingxi Jin, Gangrong Li, Qingzhu Zhang, Han Xiao, Tengfei Li, Feng Wei, Yingchun Luo
Summary: In this paper, a simple mixed-catalyzer layer modified silicon nanowire field-effect transistor biosensor was proposed, which enabled direct detection of glucose with low-charge in high ionic strength solutions. The biosensor showed high sensitivity, strong specificity, and fast real-time response.
Article
Nanoscience & Nanotechnology
B. Li, H. Huang
Summary: A furan ring is often incorporated into n-conjugated molecules, either by fusion with a carbon n-system or as an n-spacer, leading to significant changes in the photophysical, electrochemical, and charge transport properties. Furan semiconductors, as a emerging class of organic semiconductors, have attracted wide attention due to their remarkable features such as high solubility, photoluminescent quantum efficiency, and carrier mobility. Notably, both p-type and n-type furan semiconductors show great potential for applications in organic field-effect transistors (OFETs), with the highest mobility of 7.7 cm2/Vs achieved for a quinoidal oligofuran. In this review, we summarize the development of furan semiconductors and their applications in OFETs, providing a perspective on these materials.
MATERIALS TODAY NANO
(2023)
Article
Nanoscience & Nanotechnology
Muhammad Shafa, Di Wu, Xi Chen, Naveed ul Hassan Alvi, Yi Pan, Adel Najar
Summary: In this study, a method to fabricate high-performance and flexible photodetector devices using crystalline InSb nanowire arrays on a flexible substrate was presented. The devices demonstrated high photoresponsivity and sensitivity to mid-infrared, efficient rise and decay times, and short time lag for infrared detection. The calculated specific detectivity of the flexible photodetector was 1.4 x 10(12) Jones, showing promising potential for wearable infrared photodetectors.
Article
Engineering, Electrical & Electronic
Kai Zhang, Sina Li, Jianru Chen, Lingyu Zhu, Yiming Sun, Jingbo Li, Nengjie Huo
Summary: In this study, a new dual-junctions field-effect transistor (DJFET) is proposed, which uses a van der Waals heterojunction of two-dimensional materials as the carrier transport channel. This transistor exhibits superior characteristics and can be used for high-density integration and low-power consumption electronics, competing with MOSFETs based on 2-D semiconductors.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Nanoscience & Nanotechnology
Tengfei Xu, Man Luo, Niming Shen, Yiye Yu, Zhen Wang, Zhuangzhuang Cui, Jiayi Qin, Fang Liang, Yunfeng Chen, Yong Zhou, Fang Zhong, Meng Peng, Muhammad Zubair, Ning Li, Jinshui Miao, Wei Lu, Chenhui Yu, Weida Hu
Summary: The study successfully synthesized high-quality ternary 2D layered material FePSe3 through an optimized chemical vapor transport method and developed a high-performance field-effect transistor photodetector. The research findings demonstrate that 2DLM FePSe3 has a wide photocurrent spectrum, providing new possibilities for the development of broad-spectrum technology.
ADVANCED ELECTRONIC MATERIALS
(2021)
Article
Engineering, Electrical & Electronic
Jingyi Wang, Zhiyang Xie, Liqi Zhu, Xinbo Zou, Xuyi Zhao, Wenfu Yu, Ruotao Liu, Antian Du, Qian Gong, Baile Chen
Summary: In this work, a broadband photodetector based on In0.53Ga0.47As/GaAs0.5Sb0.5 type-II superlattice (T2SL) is demonstrated, with an optical spectrum response ranging from 250 nm to 2400 nm. The photodetector exhibits low dark current density and high sensitivity, and the responsivity of the UV and visible band is enhanced by fabricating a recessed window.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Physics, Multidisciplinary
Songming Guo, Weibin Feng, Yong Long, Zhihao Liu, Xiao Fu, Haowen Liang, Juntao Li
Summary: A silicon metalens is proposed and designed to enhance the depth of focus and resolution requirements of the optical coherence tomography system for imaging human corneas.
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
(2022)
Article
Physics, Applied
Jun He, Zhiwei Huang, Ziyuan Li, Wei Wen Wong, Yang Yu, Longsibo Huang, Xi Li, Lan Fu, Hark Hoe Tan, Chennupati Jagadish, Xiaoming Yuan
Summary: This study presents the design of polarization-sensitive infrared photodetectors based on 2D InAs nanosheet arrays. By optimizing the geometry and height of the nanosheets, the absorption intensity and dichroic ratio are significantly enhanced, and the detectors exhibit high tolerance to incident angles.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2023)
Article
Nanoscience & Nanotechnology
Tuomas Haggren, Julie Tournet, Chennupati Jagadish, Hark Hoe Tan, Jani Oksanen
Summary: A scalable multilayer epitaxial lift-off process is demonstrated, which allows efficient removal of epitaxially grown materials from their host substrate without external strains. The films retain good integrity after lift-off and can be further processed into devices. Cost analysis shows a 4-to-6-fold reduction in cost compared to the single-layer epitaxial lift-off process, making it significant for III-V photovoltaics and other technologies relying on thin-film III-V semiconductors.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Engineering, Electrical & Electronic
Ford M. Wagner, Simas Melnikas, Joel Cramer, Djamshid A. Damry, Chelsea Q. Xia, Kun Peng, Gerhard Jakob, Mathias Klaeui, Simonas Kicas, Michael B. Johnston
Summary: Spintronic metal thin films excited by femtosecond laser pulses have recently been discovered as excellent broadband sources of terahertz (THz) radiation. However, these emitters transmit a portion of the incident excitation laser, which causes interference and wasted energy. To address these issues, a high-reflectivity (HR) coating made from alternating layers of SiO2 and Ta2O5 is introduced. The HR-coated emitters transmit less than 0.1% of the incident pulse and increase the peak THz signal by roughly 35%. Further enhancement of the THz signal is achieved by including an anti-reflective coating to the HR-coated emitters, resulting in a 4% increase in the peak THz signal.
JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES
(2023)
Article
Optics
Wei Wen Wong, Naiyin Wang, Chennupati Jagadish, Hark Hoe Tan
Summary: This study presents a novel approach to realize on-chip microlasers with directional emission in an all-dielectric, bottom-up grown material system. By coupling the laser emission into a vertical nanowire, efficient optical coupling is achieved and the emission directivity and side mode suppression can be improved by tuning the geometric parameters of the system.
LASER & PHOTONICS REVIEWS
(2023)
Article
Chemistry, Multidisciplinary
Jun-Wei Liao, Zhen-Ting Huang, Chia-Hung Wu, Nikita Gagrani, Hark Hoe Tan, Chennupati Jagadish, Kuo-Ping Chen, Tien-Chang Lu
Summary: In this study, localized surface plasmon lasing at room temperature in the communication band was achieved using metallic nanoholes as plasmonic nanocavity and InP nanowires as gain medium. Optimization of laser performance was demonstrated through coupling between two metallic nanoholes, allowing for manipulation of lasing properties. These plasmonic nanolasers offer lower power consumption, smaller mode volumes, and higher spontaneous emission coupling factors, making them promising for high-density sensing and photonic integrated circuits.
Article
Engineering, Electrical & Electronic
Haroldo T. T. Hattori, Sanjida Akter, Ibrahim A. M. Al-Ani, Ziyuan Li
Summary: Silicon carbide is widely used in various applications due to its unique properties. Researchers have developed a heterostructure consisting of n-doped silicon carbide substrate and a layer of tantalum monoboride for near UV photodetection. The heterostructure exhibits high current handling capability, responsivity, and fast frequency response. It offers a simple method to produce high-performance near UV photodetectors for harsh environments.
IEEE PHOTONICS JOURNAL
(2023)
Editorial Material
Optics
Chaohao Chen, Ziyuan Li, Lan Fu
Summary: Researchers integrated narrowband red, green, blue self-filtering perovskite photodetectors and a broadband white photodetector into a single pixel imaging camera, mimicking the cone cells and rod cells in the human visual system, resulting in the demonstration of high-resolution color images in diffuse mode.
LIGHT-SCIENCE & APPLICATIONS
(2023)
Review
Materials Science, Multidisciplinary
Ziyuan Li, Zeyu He, Chenyang Xi, Fanlu Zhang, Longsibo Huang, Yang Yu, Hark Hoe Tan, Chennupati Jagadish, Lan Fu
Summary: In recent years, III-V semiconductor nanowires have been extensively studied for their applications in infrared photodetectors. This is due to their unique properties such as direct and suitable bandgap, flexibility in device design, and ability to grow on foreign substrates with more effective strain relaxation. Vertically aligned and ordered nanowire arrays have emerged as a promising platform for photodetectors, allowing for tailored light absorption and carrier transport properties. This article provides a comprehensive review of the progress in the development of various types of infrared photodetectors based on III-V semiconductor nanowire arrays, including the synthesis/fabrication methods, device performance, and emerging applications. The challenges and future perspectives for the development of low-cost, large-scale, high-performance nanowire array infrared photodetectors are also analyzed.
ADVANCED MATERIALS TECHNOLOGIES
(2023)
Article
Nanoscience & Nanotechnology
Bikesh Gupta, Doudou Zhang, Hongjun Chen, Chennupati Jagadish, Hark Hoe Tan, Siva Karuturi
Summary: This study presents a novel approach for fabricating high-performance solar cells based on InP heterojunctions using a solution-processed ferri-hydrite (Fh) electron-selective contact (ESC). The champion cell efficiency of 16.6% is achieved, which is a significant improvement over those from previous studies using other solution-processed ESC materials. The Fh layer not only selectively extracts photogenerated electrons from InP but also simultaneously serves as a surface protection layer, improving the cell's long-term stability.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Multidisciplinary
Wei Wen Wong, Naiyin Wang, Bryan D. D. Esser, Stephen A. A. Church, Li Li, Mark Lockrey, Igor Aharonovich, Patrick Parkinson, Joanne Etheridge, Chennupati Jagadish, Hark Hoe Tan
Summary: In this study, we utilize the selective area epitaxy method to deterministically engineer thousands of microring lasers on a single chip. By elucidating a detailed growth mechanism and controlling the adatom diffusion lengths, we achieve ultrasmooth cavity sidewalls. These engineered devices exhibit a tunable emission wavelength in the telecommunication O-band and show low-threshold lasing with high device efficacy across the chip. This work marks a significant milestone toward the implementation of a fully integrated III-V materials platform for next-generation high-density integrated photonic and optoelectronic circuits.
Article
Chemistry, Multidisciplinary
Ziyuan Li, Zahra Azimi, Zhe Li, Yang Yu, Longsibo Huang, Weiqi Jin, Hark Hoe Tan, Chennupati Jagadish, Jennifer Wong-Leung, Lan Fu
Summary: In this study, efficient photodetection of light from near-infrared to mid-wave infrared was achieved by engineering InAs nanowire arrays. By optimizing the nanowire growth temperature and V/III ratio, a high wurtzite density of about 67% was obtained in the nanowire arrays. Due to the formation of a p-n junction, the nanowire arrays exhibited an ultrawide room-temperature photoresponse ranging from 500 to 3500 nm under zero bias. The nanowire arrays also showed high responsivity and detectivity at a relatively high operating temperature of 150 K. This research demonstrates the potential of InAs nanowire arrays for the development of high-performance ultra-broadband infrared photodetectors for wavelengths ranging from NIR to MWIR.
Article
Materials Science, Multidisciplinary
Morteza Aghaee, Arun Akkala, Zulfi Alam, Rizwan Ali, Alejandro Alcaraz Ramirez, Mariusz Andrzejczuk, Andrey E. Antipov, Pavel Aseev, Mikhail Astafev, Bela Bauer, Jonathan Becker, Srini Boddapati, Frenk Boekhout, Jouri Bommer, Tom Bosma, Leo Bourdet, Samuel Boutin, Philippe Caroff, Lucas Casparis, Maja Cassidy, Sohail Chatoor, Anna Wulf Christensen, Noah Clay, William S. Cole, Fabiano Corsetti, Ajuan Cui, Paschalis Dalampiras, Anand Dokania, Gijs de Lange, Michiel de Moor, Juan Carlos Estrada Saldana, Saeed Fallahi, Zahra Heidarnia Fathabad, John Gamble, Geoff Gardner, Deshan Govender, Flavio Griggio, Ruben Grigoryan, Sergei Gronin, Jan Gukelberger, Esben Bork Hansen, Sebastian Heedt, Jesus Herranz Zamorano, Samantha Ho, Ulrik Laurens Holgaard, Henrik Ingerslev, Linda Johansson, Jeffrey Jones, Ray Kallaher, Farhad Karimi, Torsten Karzig, Cameron King, Maren Elisabeth Kloster, Christina Knapp, Dariusz Kocon, Jonne Koski, Pasi Kostamo, Peter Krogstrup, Mahesh Kumar, Tom Laeven, Thorvald Larsen, Kongyi Li, Tyler Lindemann, Julie Love, Roman Lutchyn, Morten Hannibal Madsen, Michael Manfra, Signe Markussen, Esteban Martinez, Robert McNeil, Elvedin Memisevic, Trevor Morgan, Andrew Mullally, Chetan Nayak, Jens Nielsen, William Hvidtfelt Padkaer Nielsen, Bas Nijholt, Anne Nurmohamed, Eoin OFarrell, Keita Otani, Sebastian Pauka, Karl Petersson, Luca Petit, Dmitry I. Pikulin, Frank Preiss, Marina Quintero-Perez, Mohana Rajpalke, Katrine Rasmussen, Davydas Razmadze, Outi Reentila, David Reilly, Richard Rouse, Ivan Sadovskyy, Lauri Sainiemi, Sydney Schreppler, Vadim Sidorkin, Amrita Singh, Shilpi Singh, Sarat Sinha, Patrick Sohr, Tomas Stankevic, Lieuwe Stek, Henri Suominen, Judith Suter, Vicky Svidenko, Sam Teicher, Mine Temuerhan, Nivetha Thiyagarajah, Raj Tholapi, Mason Thomas, Emily Toomey, Shivendra Upadhyay, Ivan Urban, Saulius Vaitiekenas, Kevin Van Hoogdalem, David Van Woerkom, Dmitrii V. Viazmitinov, Dominik Vogel, Steven Waddy, John Watson, Joseph Weston, Georg W. Winkler, Chung Kai Yang, Sean Yau, Daniel Yi, Emrah Yucelen, Alex Webster, Ruichen Zhao
Summary: In this study, measurements and simulations of semiconductor-superconductor heterostructure devices were conducted to observe topological superconductivity and Majorana zero modes. The devices were optimized to ensure robustness against nonuniformity and disorder. Experimental results indicate the presence of a topological superconducting phase, which is a prerequisite for experiments involving Majorana zero modes fusion and braiding.
Article
Chemistry, Multidisciplinary
Daniel Walter, Jun Peng, Klaus Weber, Kylie R. Catchpole, Thomas P. White
Summary: This study discusses the impact of transparent conductive oxides on power loss in perovskite solar cells. It reveals that these oxides play a critical role across the transport layer-perovskite interface, causing significant in situ resistance which can reduce fill factor considerably.
ENERGY & ENVIRONMENTAL SCIENCE
(2022)
Article
Chemistry, Multidisciplinary
Yifan Jiang, Rui Shen, Tong Li, Jiamin Tian, Shuo Li, Hark Hoe Tan, Chennupati Jagadish, Qing Chen
Summary: This study systematically investigates the effect of Y2O3 coating on the performance of InAs NW FETs. The Y2O3 coating can reduce hysteresis, subthreshold swing, and on-state resistance, while increasing field-effect mobility and the on-off ratio. Furthermore, the stacking with HfO2 dielectric can provide better gate control and lower interface trap density.
