Article
Chemistry, Physical
Xiaoyi Lei, Xiaoya Zhu, Hao Wang, Yang Dai, Han Zhang, Chunxue Zhai, Shulong Wang, Junfeng Yan, Wu Zhao
Summary: This study investigates the resistive switching characteristics of Cu/MoS2/ITO RRAM and proposes conceptual models to explain the nonvolatile and volatile behaviors observed. The results suggest that the resistive switching is influenced by the formation and breaking of Cu conductive filaments and the trapping and de-trapping of electrons at the ITO/MoS2 interface.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Engineering, Electrical & Electronic
Hua-Nan Liang, Na Bai, Lan-Qing Zou, Hua-Jun Sun, Kan-Hao Xue, Wei-Ming Cheng, Hong Lu, Xiang-Shui Miao
Summary: In this study, the insertion of a GeTe layer in HfOx-based memristors improved the forming yield, memory window, and resistive switching uniformity. The resistive switching characteristics were studied using two forming polarities, positive forming and negative forming, resulting in unstable and volatile behavior related to ovonic threshold switching and the observation of negative differential resistance phenomenon.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Multidisciplinary Sciences
Shaobo Cheng, Min-Han Lee, Xing Li, Lorenzo Fratino, Federico Tesler, Myung-Geun Han, Javier Del Valle, R. C. Dynes, Marcelo J. Rozenberg, Ivan K. Schuller, Yimei Zhu
Summary: Vanadium dioxide (VO2) is capable of metal-insulator transition and resistive switching, making it suitable for neuromorphic computing hardware. This study reveals the mechanisms of both volatile and nonvolatile switching in VO2, which can emulate neuronal and synaptic behaviors, respectively, providing a comprehensive understanding of resistive switching crucial for neuromorphic computing development.
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
(2021)
Article
Chemistry, Multidisciplinary
Mahmoud N. Almadhoun, Maximilian Speckbacher, Brian C. Olsen, Erik J. Luber, Sayed Youssef Sayed, Marc Tornow, Jillian M. Buriak
Summary: The study demonstrates memristive behavior in Ga/GaOx/SiOx/p(+)-Si junctions, with a reversible insulator-metal transition and high ON/OFF ratio. The presence of a nanoscale gallium oxide layer plays a critical role in achieving reversible resistive switching.
Article
Nanoscience & Nanotechnology
Chuan Yang, Bai Sun, Guangdong Zhou, Hongbin Zhao, Shouhui Zhu, Chuan Ke, Yong Zhao, Hongyan Wang
Summary: A nanoscale memristor device with multiple physical characteristics was prepared and showed different behaviors at different voltages. It exhibited volatile behavior at low voltages (<1.5V) and nonvolatile behavior at higher voltages (>2V). It also showed non-zero-crossing current-voltage (I-V) hysteresis in the voltage range of 0.5-1V. Furthermore, it displayed ideal memristor behavior and negative differential resistance effect in the voltage range of 3.5-4.0V. This nanoscale device opens up a promising way to understand emerging physical phenomena and could be a potential candidate for the next generation of multifunctional electronic devices.
ACS APPLIED NANO MATERIALS
(2023)
Article
Nanoscience & Nanotechnology
Ramesh Gayathri, Varghese Maria Angela, Panneerselvam Devibala, Predhanekar Mohamed Imran, Samuthira Nagarajan
Summary: In order to comprehend the relationship between structure and property as well as the significance of the donor-acceptor system in resistive memory devices, a series of new organic small molecules were designed and synthesized. The devices with A-N-D-N-A structures exhibited write-once-read-many memory behavior, while those based on D-N-D-N-D molecules only showed conductor property. The presence of donor/acceptor substituents significantly influenced the memory-switching behavior, suggesting that a D-A architecture is ideal for resistance switching characteristics in memory devices.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Engineering, Electrical & Electronic
Chih-Ying Chen, Yu-Hsiu Feng, Hong-Lin Lu, Feng-En Chang, Jui-Yuan Chen
Summary: In this study, an integrated structure called one phase-change memory one resistive random access memory (1P1R) was proposed to suppress the sneak current during stacking. The 1P1R device remained in a high resistance state to suppress the sneak current, and switched to a working state to write/read its state. The feasibility of the 1P1R structure was confirmed through electrical measurement, and the property analysis provided insight into its speculated mechanism. The results demonstrated that the novel 1P1R structure could effectively suppress sneak current, showing potential for 3D IC manufacturing.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Chemistry, Physical
Zicong Guo, Yuanyuan Zhu, Jing Zhou, Xiaoyu Ma, Lixin Wang, Mengyao Chen, Yong Liu, Rui Xiong, Ziyu Wang, Chao Zuo, Hongjun Wang
Summary: Yttrium oxide (Y2O3) has been investigated as a functional material for resistive switching memories. However, there is a lack of understanding regarding the tuning of oxygen vacancies by various electrodes in Y2O3-based memories. In this study, non-crystalline Y2O3 films prepared through magnetron sputtering deposition were used to construct resistive switching memory devices with different structures. The devices exhibited nonvolatile bipolar resistive switching behaviors, which were dependent on the formation/rupture of conductive filaments composed of oxygen vacancies. The Y2O3-based memories with Pt/Y2O3/Pt structure showed competitive switching properties, including ultra-low set/reset voltages and high retention characteristics. The influence of different electrodes on oxygen vacancies and the morphologies of conductive filaments were discussed in detail. Additionally, physical models were proposed to clarify carrier transport mechanisms and switching behaviors for memories with different structures.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Chemistry, Physical
Qiaojing Wang, Yibo Deng, Jianxia Chen, Liying Lu, Yingli Ma, Likun Zang
Summary: Resistive random-access memory (ReRAM) is a promising field, but it faces challenges of poor thermal stability and low ON/OFF ratio. By combining polymer materials with metal nanoparticles, the resistive switching properties can be effectively improved. This study developed a modified electrochemical strategy to synthesize dense polypyrrole-Ag nanoparticles (PPy-Ag NPs) composite films as the active layer in the memory device. The introduction of Ag NPs resulted in a bipolar switching phenomenon and the memory properties were influenced by the doping concentration of Ag NPs.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Nanoscience & Nanotechnology
Md Mehedi Hasan Tanim, Brandon Sueoka, Zhigang Xiao, Kuan Yew Cheong, Feng Zhao
Summary: This paper investigates the use of carbon nanotubes (CNTs) embedded in natural organic honey as a resistive switching material for biodegradable nonvolatile memory. The study shows that despite CNTs forming agglomerations in the dried honey-CNT film, the resistive switching speed and stability of the honey-CNT memory are improved. The current conduction mechanism of CNTs transitions from Ohm's law to space charge limited conduction at high voltages approaching the SET voltage.
Article
Physics, Applied
Pradeep Kumar, Davinder Kaur
Summary: This research focuses on the fabrication of multifunctional flexible electronics for wearable data storage and communication devices. The study demonstrates a resistive random access memory (RAM) constructed using a magnetoelectric heterostructure consisting of piezoelectric and ferromagnetic materials. The RAM shows excellent endurance, data retention capability, and resistance switching behavior. The researchers also investigate the influence of temperature and magnetic field on the RAM's resistance states, showcasing the device's multifunctionality.
APPLIED PHYSICS LETTERS
(2022)
Article
Nanoscience & Nanotechnology
Aishani Mazumder, Taimur Ahmed, Edwin Mayes, Sherif Abdulkader Tawfik, Salvy P. Russo, Mei Xian Low, Abhishek Ranjan, Sivacarendran Balendhran, Sumeet Walia
Summary: This study investigates the interplay between silver cations and indium selenide, demonstrating a nonvolatile switching device with a filamentary-based mechanism. The research opens new opportunities for enhancing resistive switching performances of 2D materials for next-generation information storage and brain-inspired computation using active metal diffusion.
ADVANCED ELECTRONIC MATERIALS
(2022)
Article
Nanoscience & Nanotechnology
Xiao-Dong Li, Bai-Qian Wang, Nian-Ke Chen, Xian-Bin Li
Summary: The non-volatile resistive switching process of a MoS2 based atomristor with a vertical structure is investigated. The monolayer MoS2 with a S vacancy defect (V-S) can maintain insulation characteristics and a high resistance state (HRS) is remained. By adsorbing an electrode metal atom on the MoS2 monolayer, a semi-conductive filament is formed with the assistance of V-S, resulting in a low resistance state (LRS). The investigation provides atomic level understanding of the resistive switching properties and can be applied to atomristors based on other monolayer transition-metal dichalcogenides.
Article
Materials Science, Multidisciplinary
Ying Lu, Shuang Gao, Fali Li, Youlin Zhou, Zhuolin Xie, Huali Yang, Wuhong Xue, Benlin Hu, Xiaojian Zhu, Jie Shang, Yiwei Liu, Run-Wei Li
Summary: This paper presents an intrinsically stretchable and twistable resistive switching memory with a large memory window and excellent retention, capable of ensuring data integrity during dynamic stretching-release processes. A logic-in-memory computation prototype is successfully implemented using three stretched memory cells.
ADVANCED MATERIALS TECHNOLOGIES
(2021)
Article
Biochemistry & Molecular Biology
Zhiqiang Yu, Jinhao Jia, Xinru Qu, Qingcheng Wang, Wenbo Kang, Baosheng Liu, Qingquan Xiao, Tinghong Gao, Quan Xie
Summary: A facile sol-gel spin coating method was used to synthesize spin-coated ZnO nanofilms on ITO substrates. The resulting W/ZnO/ITO memory cell based on ZnO nanofilms exhibited forming-free and tunable nonvolatile multilevel resistive switching behaviors with a high resistance ratio. The tunable nonvolatile resistive switching behaviors of the memory cell were achieved by modulating the set voltages.
