期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 596, 期 -, 页码 140-144出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2014.01.177
关键词
Cu2ZnSnS4; Kesterite; Hopping conductivity; Flash evaporation; Acceptor band; Solar cell
资金
- People Programme (Marie Curie Actions) of the European Union under REA Grant [269167]
- Spanish MINECO Project (KEST-PV) [ENE2010-21541-C03]
- FRCFB [13.820.05.11/BF]
- Spanish MINECO within the Program Ramon y Cajal [RYC-2011-08521]
Resistivity, rho(T), of as-grown and annealed Cu2ZnSnS4 films, obtained by flash evaporation, is investigated between T similar to 10 and 300 K. A correlation between the transport properties and the growth conditions of the thin films is also explored. The behavior of rho(T) in the as-grown films exhibits a close proximity to the metal-insulator transition (MIT), whereas annealing shifts the material from the MIT towards an insulating side. This is attributable to an increased microscopic lattice disorder, which is substantiated by the analysis of the Mott variable-range hopping conductivity observed up to T similar to 220-280 K (120-180 K) in the as-grown (annealed) films. An increased width of the acceptor band, a decreased relative acceptor concentration, N/N-c and lower values of the mean density of the localized states, g, are obtained after annealing. (C) 2014 Elsevier B. V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据