Effects of post-deposition annealing ambient on chemical, structural, and electrical properties of RF magnetron sputtered Y2O3 gate on gallium nitride

标题
Effects of post-deposition annealing ambient on chemical, structural, and electrical properties of RF magnetron sputtered Y2O3 gate on gallium nitride
作者
关键词
-
出版物
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 575, Issue -, Pages 382-392
出版商
Elsevier BV
发表日期
2013-06-07
DOI
10.1016/j.jallcom.2013.05.202

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