Sulfur vacancy activated field effect transistors based on ReS2nanosheets

标题
Sulfur vacancy activated field effect transistors based on ReS2nanosheets
作者
关键词
-
出版物
Nanoscale
Volume 7, Issue 38, Pages 15757-15762
出版商
Royal Society of Chemistry (RSC)
发表日期
2015-08-26
DOI
10.1039/c5nr04625d

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