期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 509, 期 10, 页码 4146-4149出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2011.01.007
关键词
Gadolinium; Cadmium oxide; Bandgap; Pulsed laser deposition; Thin film
资金
- National Science Foundation [DMR-0907037]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0907037] Funding Source: National Science Foundation
Gadolinium (Gd) doped cadmium oxide (CdO) thin films are grown at low temperature (100 degrees C) using pulsed laser deposition technique. The effect of oxygen partial pressures on structural, optical, and electrical properties is studied. X-ray diffraction studies reveal that these films are polycrystalline in nature with preferred orientation along (1 1 1) direction. Atomic force microscopy studies show that these films are very smooth with maximum root mean square roughness of 0.77 nm. These films are highly transparent and transparency of the films increases with increase in oxygen partial pressure. We observe an increase in optical bandgap of CdO films by Gd doping. The maximum optical band gap of 3.4 eV is observed for films grown at 1 x 10(-5) mbar. The electrical resistivity of the films first decreases and then increases with increase in oxygen partial pressure. The lowest electrical resistivity of 2.71 x 10(-5) Omega cm and highest mobility of 258 cm(2)/Vs is observed. These low temperature processed highly conducting, transparent, and wide bandgap semiconducting films could be used for flexible optoelectronic applications. (C) 2011 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据