期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 509, 期 7, 页码 3282-3285出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2010.10.049
关键词
Thin film; Ni doped ZnO; Ni-Ga co-doped ZnO; Ferromagnetism; PLD
资金
- National Natural Science Foundation of China [51072181]
- Ministry of Education of China [20090101110044]
ZnNiO and Zn(Ni,Ga)O thin films were prepared on glass substrates by pulsed laser deposition. The obtained films are of good crystal quality and have smooth surfaces, which have a hexagonal wurtzite ZnO structure with a highly c-axis orientation without any Ga or Ni related phases. Hall-effect measurements showed that the ZnNiO film is n-type, in which the carrier concentration would be greatly enhanced by the addition of Ga. Room temperature ferromagnetism is observed for the ZnNiO and Zn(Ni,Ga)O films. The addition of Ga into the ZnNiO films increases the electron concentration but weakens the room temperature ferromagnetism. (C) 2010 Published by Elsevier B.V.
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