期刊
NANO RESEARCH
卷 9, 期 2, 页码 282-290出版社
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-015-0908-6
关键词
piezotronic transistor; two-dimensional (2D) MoS2; ballistic transport; numerical calculation
类别
资金
- thousands talents program for pioneer researcher and his innovation team, China
- National Natural Science Foundation of China [51432005]
- Beijing Municipal Commission of Science and Technology [Z131100006013005, Z131100006013004]
Because of the coupling between semiconducting and piezoelectric properties in wurtzite materials, strain-induced piezo-charges can tune the charge transport across the interface or junction, which is referred to as the piezotronic effect. For devices whose dimension is much smaller than the mean free path of carriers (such as a single atomic layer of MoS2), ballistic transport occurs. In this study, transport in the monolayer MoS2 piezotronic transistor is studied by presenting analytical solutions for two-dimensional (2D) MoS2. Furthermore, a numerical simulation for guiding future 2D piezotronic nanodevice design is presented.
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