期刊
NANO LETTERS
卷 16, 期 1, 页码 250-254出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b03625
关键词
localized surface plasmon resonance; plasmon energy detection; plasmon field effect transistor; nanophotonics
类别
资金
- John T. Macdonald Foundation Biomedical Nanotechnology Institute
- NSF [1235036]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1235036] Funding Source: National Science Foundation
Direct coupling of electronic excitations of optical energy via plasmon resonances opens the door to improving gain and selectivity in various optoelectronic applications. We report a new device structure and working mechanisms for plasmon resonance energy detection and electric conversion based on a thin film transistor device with a metal nanostructure incorporated in it. This plasmon field effect transistor collects the plasmonically induced hot electrons from the physically isolated metal nanostructures. These hot electrons contribute to the amplification of the drain current. The internal electric field and quantum tunneling effect at the metal-semiconductor junction enable highly efficient hot electron collection and amplification. Combined with the versatility of plasmonic nanostructures in wavelength tunability, this device architecture offers an ultrawide spectral range that can be used in various applications.
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