Article
Instruments & Instrumentation
Lifang She, Junkai Jiang, Weiqiang Chen, Suning Cui, Dongwei Jiang, Guowei Wang, Yingqiang Xu, Hongyue Hao, Donghai Wu, Ying Ding, Zhichuan Niu
Summary: In this study, mid-wavelength infrared InAs/InAsSb type-II superlattice p(+)-B-n photodetectors are demonstrated, with the introduction of an AlAsSb/InAsSb superlattice barrier structure to reduce bias dependency. The photodetector exhibits low dark current density, high quantum efficiency, and high specific detectivity at 150K.
INFRARED PHYSICS & TECHNOLOGY
(2022)
Article
Instruments & Instrumentation
Hao Xie, Hongyu Lin, Ziji Zhou, Zhengji Wen, Yan Sun, Jiaming Hao, Shuhong Hu, Ning Dai
Summary: A pBin InAsSb photodetector structure has been successfully grown using cost-effective Liquid Phase Epitaxy (LPE) technique. The introduction of a high-quality InAsSbP barrier effectively reduces dark current, leading to good room temperature detector performances. The device shows a clear room-temperature photoresponse in the middle wavelength infrared (MWIR) range. Due to the nearly zero valence band offset, the InAsSbP barrier blocks the electron dark current while allowing photogenerated holes to flow, significantly improving the detector's performance. This self-powered device has potential applications in both military and civilian fields. Rating: 8/10.
INFRARED PHYSICS & TECHNOLOGY
(2023)
Article
Chemistry, Multidisciplinary
Tae Jin Yoo, Wan Sik Kim, Kyoung Eun Chang, Cihyun Kim, Min Gyu Kwon, Ji Young Jo, Byoung Hun Lee
Summary: A graphene photodetector decorated with Bi2Te3 nanowires demonstrated high gain and wide bandwidth window. The photoconductive gain was significantly improved compared to a graphene/Bi2Te3 nanoplate junction, and the position of photocurrent generation was investigated. By utilizing low bandgap Bi2Te3 nanowires and a graphene junction, the photoresponsivity was increased effectively.
Article
Nanoscience & Nanotechnology
Muhammad Shafa, Di Wu, Xi Chen, Naveed ul Hassan Alvi, Yi Pan, Adel Najar
Summary: In this study, a method to fabricate high-performance and flexible photodetector devices using crystalline InSb nanowire arrays on a flexible substrate was presented. The devices demonstrated high photoresponsivity and sensitivity to mid-infrared, efficient rise and decay times, and short time lag for infrared detection. The calculated specific detectivity of the flexible photodetector was 1.4 x 10(12) Jones, showing promising potential for wearable infrared photodetectors.
Article
Engineering, Electrical & Electronic
Ahreum Jang, Hyun-Jin Lee, Young Chul Kim, Jun Ho Eom, Hyun Chul Jung, Ko-Ku Kang, Sung Min Ryu, Tae Hee Lee, Jong Gi Kim, Young Ho Kim, Han Jung
Summary: Ga-free InAs/InAsSb type-II superlattice (T2SL) is used as an absorption layer in a high-operating-temperature mid-wavelength infrared nBn detector due to its long minority carrier lifetime. However, the ternary barrier in the Ga-free T2SL nBn detector is easily oxidized, leading to surface leakage current, and the unavoidable valence band offset (VBO) between the barrier and absorption layer results in high turn-on voltage and dark current. By replacing the ternary barrier with an InAs/AlAsSb/InAsSb T2SL barrier, the dark current density of the fabricated nBn device significantly decreased.
JOURNAL OF ELECTRONIC MATERIALS
(2022)
Article
Chemistry, Physical
Yongxu Yan, Wenhao Ran, Zhexin Li, Linlin Li, Zheng Lou, Guozhen Shen
Summary: By surface modification of Cd3As2 NWs with sulfur, the oxidation of surface was prevented and bandgap structure was optimized to enhance the photoresponse performance. The S-modified Cd3As2 samples as core/shell Cd3As2/CdS NWs showed significantly improved responsivity in the NIR band.
Article
Nanoscience & Nanotechnology
Shihab Bin Hafiz, Mohammad M. Al Mahfuz, Sunghwan Lee, Dong-Kyun Ko
Summary: By blending two different types of quantum dots to control electrical properties, films containing Ag2Se intraband quantum dots were prepared and p-n heterojunction diodes with strong rectifying characteristics were successfully fabricated. The peak specific detectivity at 4.5 mu m measured an orders of magnitude improvement compared to the previous generation of intraband quantum dot detectors at room temperature.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Physics, Applied
Qianqian Xu, Zhengji Wen, Xiaohang Pan, Chong Tan, Jinguo Zhang, Qianli Qiu, Yan Sun, Xin Chen, Ning Dai, Junhao Chu, Jiaming Hao
Summary: Bismuth-based planar thin film metamaterials have been shown to have extraordinary potential in achieving light perfect absorption in the midwavelength infrared range. The absorber consists of an ultra-thin bismuth film and a continuous metallic film separated by a dielectric spacer, and exhibits narrowband absorption that can continuously span the entire midwavelength infrared range. It also displays wide-angle absorption up to 80 degrees and is polarization-insensitive.
APPLIED PHYSICS EXPRESS
(2022)
Article
Engineering, Electrical & Electronic
Maryam Shaveisi, Peiman Aliparast
Summary: In this study, a new back-side illuminated InAsSb-based nBn photodetector with an InAsSb absorber layer and InAlSb/AlAsSb core/shell compound barrier is reported, which has a cut-off wavelength of more than 5 μm at room temperature. The use of core/shell heterostructure compound barrier reduces the valence band offset and significantly reduces dark current density while increasing the device's optical response.
OPTICAL AND QUANTUM ELECTRONICS
(2023)
Article
Chemistry, Multidisciplinary
Lukas Stampfer, Damon J. Carrad, Dags Olsteins, Christian E. N. Petersen, Sabbir A. Khan, Peter Krogstrup, Thomas S. Jespersen
Summary: In this study, the gate-dependent surface accumulation layer in half-shell InAsSb/Al nanowires was investigated using Andreev interference. The results showed that the spatial distribution of the surface accumulation layer can be tuned by the gate potential, consistent with electrostatic models.
ADVANCED MATERIALS
(2022)
Article
Chemistry, Physical
Hossein Roshan, Fereshte Ravanan, Mohammad Hossein Sheikhi, Ali Mirzaei
Summary: This study demonstrated a novel photoconductor based on Ag2S nanocrystals, showing high detectivity under different illuminations.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Physics, Applied
Xueqi Bai, Peng Bai, Xiaohong Li, Siheng Huang, Xinran Lian, Wenjun Song, Zhiwen Shi, Wenzhong Shen, Yueheng Zhang
Summary: This study introduces two types of QWPs based on antenna-coupled microcavity structures, improving coupling efficiency and achieving high-performance multi-color THz detection.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Physics, Applied
A. Bader, F. Rothmayr, N. Khan, F. Jabeen, J. Koeth, S. Hoefling, F. Hartmann
Summary: This study presents an interband cascade infrared photodetector based on Ga-free type-II superlattice absorbers, achieving photovoltaic operation. Seven negative-differential-conductance (NDC) regions are observed at elevated temperatures, and the device shows high responsivity peaks under laser illumination.
APPLIED PHYSICS LETTERS
(2022)
Article
Nanoscience & Nanotechnology
Zhijun Wang, Ge He, Huazhou Zhang, Che Liao, Chi Yang
Summary: This study synthesized Pb2BiS2I3 nanowires using a hot-injection solution approach and investigated their application in photodetectors. The results showed that Pb2BiS2I3 nanowires had a narrow size distribution, excellent stability, and strong absorption in the visible-light region. The photodetector based on Pb2BiS2I3 nanowires exhibited excellent stability and photoresponse under different wavelengths of visible-light irradiation.
ACS APPLIED NANO MATERIALS
(2022)
Article
Chemistry, Physical
Lorenzo Peri, Domenic Prete, Valeria Demontis, Valentina Zannier, Francesca Rossi, Lucia Sorba, Fabio Beltram, Francesco Rossella
Summary: In this study, a significant reduction in thermal conductivity in III-V semiconductor nanowires was achieved by introducing periodic crystal-lattice twin planes. These twinning superlattice nanowires exhibited improved thermoelectric properties, making them promising nanomaterials for high-efficiency thermoelectric energy harvesting.
Article
Engineering, Electrical & Electronic
Stefan Andric, Olli-Pekka Kilpi, Mamidala Saketh Ram, Johannes Svensson, Erik Lind, Lars-Erik Wernersson
Summary: Heterostructure engineering in III-V vertical nanowire MOSFETs allows tuning of transconductance and breakdown voltage. In this work, by using InxGa1-xAs with a graded Ga composition in the channel and drain region, combined with field plate engineering, a breakdown voltage above 2.5 V and transconductance of about 1 mS/um are achieved in VNW MOSFETs.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Physics, Applied
Andre Andersen, Anton E. O. Persson, Lars-Erik Wernersson
Summary: By electrical characterization of atomic layer deposited thin films, it is discovered that the HfxZr1-xO2 (HZO) films exhibit ferroelectric properties without the need for annealing. Laminated HZO films are found to have higher remanent polarization and endurance. The trade-off between higher polarization and lower gate leakage is observed when comparing different laminate structures and deposition temperatures.
APPLIED PHYSICS LETTERS
(2022)
Article
Multidisciplinary Sciences
Zhongyunshen Zhu, Anton E. O. Persson, Lars -Erik Wernersson
Summary: This study demonstrates the integration of a ferroelectric gate stack on a heterostructure tunnel field-effect transistor (TFET) with subthermionic operation, enabling the sensing of localized potential variations induced by single domains and individual defects without physical gate-length scaling required for conventional transistors. The results show the ultrasensitive scale-free detection capability of single domains and defects in ultra-scaled ferroelectrics using ferroelectric TFETs. This approach provides a new path for investigating the ultimate scaling limits of ferroelectronics.
Article
Nanoscience & Nanotechnology
Nikesh Patel, H. Aruni Fonseka, Yunyan Zhang, Stephen Church, Ruqaiya Al-Abri, Ana Sanchez, Huiyun Liu, Patrick Parkinson
Summary: Bottom-up grown nanostructures often exhibit significant dimensional inhomogeneity, leading to variations in electronic properties. By applying a high-throughput characterization methodology to over 15,000 nanoskived sections of strained GaAsP/GaAs radial core/shell quantum well heterostructures, it is found that these heterostructures exhibit high emission uniformity. A highly strained core/shell nanowire design is shown to minimize the dependence of emission on the quantum well width variation.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Nanoscience & Nanotechnology
Mamidala Saketh Ram, Johannes Svensson
Summary: In this work, the role of the interlayer (IL)-oxide in InAs vertical nanowires is evaluated through low-frequency noise characterization. It is found that engineering the InAs/high-k interface can significantly reduce the low-frequency noise in InAs vertical RRAMs by more than 3 orders of magnitude. Additionally, the noise properties of the vertical 1T1R do not degrade significantly after RRAM integration, making them attractive for emerging electronic circuits.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Physics, Applied
J. R. Prance, M. D. Thompson
Summary: In ballistic superconductor-normal metal-superconductor Josephson junctions, the current-phase relation can be skewed to have a peak supercurrent at a phase difference greater than p / 2. A numerical simulation is used to investigate the sensitivity of a DC superconducting quantum interference device (SQUID) with such junctions. The flux sensitivity of the SQUID is found to be degraded by forward skewing of the current-phase relation, even with improved transfer function.
APPLIED PHYSICS LETTERS
(2023)
Article
Polymer Science
Hanaa A. Galeb, Jonas Eichhorn, Sam Harley, Alexander J. Robson, Laurine Martocq, Steven J. Nicholson, Mark D. Ashton, Hend A. M. Abdelmohsen, Emel Pelit, Sara J. Baldock, Nathan R. Halcovitch, Benjamin J. Robinson, Felix H. Schacher, Victor Chechik, Koen Vercruysse, Adam M. Taylor, John G. Hardy
Summary: This study compares the properties of conjugated polymers derived from different phenolic monomers (catechol, levodopa, and homogentisic acid) using analytical chemistry techniques to understand their structure-function relationships. The polymers exhibit measurable conductivity and their electronic properties can be adjusted by functional groups on the polymer backbones, indicating their potential for electronic device applications.
MACROMOLECULAR CHEMISTRY AND PHYSICS
(2023)
Article
Multidisciplinary Sciences
Zhongyunshen Zhu, Anton E. O. Persson, Lars-Erik Wernersson
Summary: In this study, a reconfigurable vertical nanowire ferroelectric tunnel field-effect transistor (ferro-TFET) is demonstrated, which can modulate an input signal in various ways including signal transmission, phase shift, frequency doubling, and mixing. By utilizing a heterostructure design and a ferroelectric gate oxide, the ferro-TFET achieves nearly perfect parabolic transfer characteristics and non-volatile reconfigurability. This work presents the potential for monolithic integration of steep-slope TFETs and reconfigurable ferro-TFETs for high-density, energy-efficient, and multifunctional digital/analogue hybrid circuits.
NATURE COMMUNICATIONS
(2023)
Article
Polymer Science
Irshad Ullah, Aiyeshah Alhodaib, Iffat Naz, Waqar Ahmad, Hidayat Ullah, Adnan Amin, Asif Nawaz
Summary: This study investigates the potential of omeprazole to treat skin and soft tissue infections by fabricating a chitosan-coated nanoemulgel formulation. The results show that the optimized formulation exhibits good physicochemical characteristics and satisfactory antibacterial activity, suggesting a successful treatment approach for omeprazole in topical applications.
Article
Green & Sustainable Science & Technology
Haidar Howari, Mohd Parvez, Osama Khan, Aiyeshah Alhodaib, Abdulrahman Mallah, Zeinebou Yahya
Summary: This study applies a multi-criteria decision-making model to rank different types of agricultural waste biomass feedstock based on weights calculated using the analytical hierarchy process. The possibilities of utilizing locally available biomass are examined using the TOPSIS technique. The study offers insights into thermo-chemical conversion decision-making and provides a unique perspective on this topic.
Article
Polymer Science
Asma Arooj, Asim Ur Rehman, Muhammad Iqbal, Iffat Naz, Aiyeshah Alhodaib, Naveed Ahmed
Summary: This study aimed to develop and evaluate adapalene liposomal loaded gel (ADA-LP gel) for the effective management of acne. The optimized formulation had stable physicochemical properties and sustained release of the drug. The developed ADA-LP gel showed significant improvement in acne lesions in mice.
Article
Engineering, Electrical & Electronic
Abinaya Krishnaraja, Zhongyunshen Zhu, Johannes Svensson, Lars-Erik Wernersson
Summary: This letter presents a novel approach in III-V co-integration by using a quaternary InGaAsSb channel material and a core-shell vertical nanowire structure. The gate-last process improves the device performance with self-alignment of the drain and gate contacts. The improved electrostatics and short gate length result in a good balance between on-state and off-state performances, making III-V complementary field-effect transistor integration possible.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Gautham Rangasamy, Mamidala Saketh Ram, Lars Ohlsson Fhager, Lars-Erik Wernersson
Summary: This study investigates self-heating in vertical, gate-all-around III-V InAs/InGaAs nanowire MOSFETs using pulsed IV measurements at various temperatures. The results show a negative output conductance at low temperatures, indicating the presence of self-heating. Pulsed measurements at room temperature reveal an increase in drain current (15%) and transconductance (30%), influenced by the pulse width. The effect on performance is quantified by determining the thermal resistance and capacitance, as well as modeling a first order thermal circuit based on thermal impedances. The results indicate that self-heating is a limiting factor for device performance.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Physics, Multidisciplinary
S. Autti, F. C. Bettsworth, K. Grigoras, D. Gunnarsson, R. P. Haley, A. T. Jones, Yu. A. Pashkin, J. R. Prance, M. Prunnila, M. D. Thompson, D. E. Zmeev
Summary: Researchers have found that using on-chip copper refrigerant can simulate thermal dynamics down to microkelvin temperatures. This study provides a low-investment platform for quantum technologies and fundamental nanoscience.
PHYSICAL REVIEW LETTERS
(2023)
Article
Multidisciplinary Sciences
Sandra Benter, Adam Jonsson, Jonas Johansson, Lin Zhu, Evangelos Golias, Lars-Erik Wernersson, Anders Mikkelsen
Summary: This study proposes the use of lithographically defined metal stacks to regulate the surface concentrations of freely diffusing synthesis elements on compound semiconductors. The geometric control of Indium droplet formation on Indium Arsenide surfaces is achieved, and the behaviours of Aluminium and Palladium as flux control agents are investigated. The study demonstrates that lithographic metal patterns can be used to control the formation of large droplets during the heating of compound semiconductors, providing a new way to steer bottom-up synthesis on-chip.
NATURE COMMUNICATIONS
(2023)
