☆ 4.8 Article

Robust Gap less Surface State and Rashba-Splitting Bands upon Surface Deposition of Magnetic Cr on Bi2Se3

NANO LETTERS (2015)

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期刊

NANO LETTERS
卷 15, 期 3, 页码 2031-2036

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nl504900s

关键词

topological insulator; time-reversal symmetry; ferromagnetism; angle-resolved photoemission spectroscopy (ARPES)

类别

Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter

资金

  1. National Natural Science Foundation of China [11274191, 11334006]
  2. Ministry of Education of China [20121087903, 20121778394]
  3. Advanced Light Source doctoral fellowship program
  4. Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy [DE-AC02-05CH11231]
  5. DARPA MESO program [N66001-11-1-4107]

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The interaction between magnetic impurities and the gapless surface state is of Critical importance for realizing novel quantum phenomena and new functionalities. in topological insulators. By combining angle-resolved photoemission-spectroscopic experiments with density functional theory calculations; we show that surface deposition of Cr atoms on Bi2Se3 does not lead to gap opening of the surface state at the Dirac point, indicating the absence :Of long-range out-of-plane ferromagnetism down to our measurement temperature of 15 K. This is in sharp contrast to bulk Cr doping; and the origin is attributed to different Cr occupation sites. These results highlight the importance of nanoscale configuration of doped magnetic impurities in determining the electronic and magnetic properties of topological insulators.

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