期刊
JETP LETTERS
卷 89, 期 6, 页码 290-293出版社
MAIK NAUKA/INTERPERIODICA/SPRINGER
DOI: 10.1134/S002136400906006X
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资金
- Russian Foundation for Basic Research [09-02-00467, 08-02-00152]
- Russian Academy of Sciences
The scattering mechanisms in a two-dimensional semimetal based on a HgTe quantum well, where the electron and hole densities are controlled over a wide range by applying the gate voltage, have been studied. It is shown that impurity scattering prevails in this system at low temperatures. Interparticle scattering (in this case, electrons and holes) has been observed to directly affect the resistance of the metal.
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