4.3 Article

Effect of contact resistance on mobility determination by impedance spectroscopy

期刊

出版社

IOP PUBLISHING LTD
DOI: 10.7567/JJAP.53.02BE02

关键词

-

资金

  1. Japan Society for the Promotion of Science (JSPS)
  2. Japan Society for the Promotion of Science [23360140]
  3. Ministry of Education, Culture, Sports, Science and Technology, Japan [24102011]
  4. Grants-in-Aid for Scientific Research [24102011, 23360140] Funding Source: KAKEN

向作者/读者索取更多资源

The effect of contact resistance on the determination of charge carrier mobility in single-injection space-charge-limited (SCL) diodes is numerically examined. Contact resistance is inevitably involved in the equivalent circuit of the SCL diodes. It is found that the mobility is accurately determined when it is less than or equal to 1.0 x 10(-5)cm(2)V(-1)s(-1) even in the presence of contact resistance at a semiconducting layer thickness of 100 nm, which is comparable to the active layer thickness of organic electronic devices, such as organic light-emitting diodes and organic photovoltaic devices. In contrast, when the input mobility is greater than 1.0 x 10(-4)cm(2)V(-1)s(-1) for the numerical calculation, the calculated mobility decreases with increasing contact resistance. Such information is an important guideline for the accurate measurements of mobility in single-injection SCL diodes. (C) 2014 The Japan Society of Applied Physics

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.3
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据