Optimization of Conductive Filament of Oxide-Based Resistive-Switching Random Access Memory for Low Operation Current by Stochastic Simulation

标题
Optimization of Conductive Filament of Oxide-Based Resistive-Switching Random Access Memory for Low Operation Current by Stochastic Simulation
作者
关键词
-
出版物
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 52, Issue 4S, Pages 04CD04
出版商
IOP Publishing
发表日期
2013-03-22
DOI
10.7567/jjap.52.04cd04

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