期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 52, 期 2, 页码 -出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.7567/JJAP.52.021102
关键词
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资金
- Network Joint Research Center for Materials and Devices under the Cooperative Research Program
- Sasakawa Grants for Science under the Japan Science Society
- Advanced Device Laboratories, Research Center for Green and Safety Sciences, Photovoltaic Science and Technology Research Division, under the Research Institute for Science and Technology, Tokyo University of Science
Visible-light-transparent p-type NiO films were deposited by reactive RF sputtering under unintentional heating. An optical transmittance of >80% was obtained in the wavelength range of 500-800nm when the films were deposited under a very low O-2 fraction in the gas phase O-2/(Ar + O-2) = 0.5%. This result may reflect a decrease in the concentration of Ni vacancies due to the increase in their formation energy under oxygen-poor deposition conditions. Heterostructure pn junctions consisting of p-type NiO and n-type ZnO layers were also deposited. We eventually observed a slight but noticeable photovoltaic effect. (C) 2013 The Japan Society of Applied Physics
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