First Small-Signal Data of GaN-Based p-Channel Heterostructure Field Effect Transistors

p-Channel heterostructure field effect transistors (HFETs) have recently attracted increasing interest. They open up the possibility of fabricating nitride-based low-power complementary logic for operation in environments not accessible to other semiconductors. To date, several publications have dealt with DC data of p-channel GaN-based HFETs. However, small-signal data, which is important in terms of accessible operation frequencies, is missing. In this brief note, we report for the first time the small-signal characteristics and cut-off frequencies of a p-channel device. (C) 2013 The Japan Society of Applied Physics