期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 51, 期 10, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1143/JJAP.51.100207
关键词
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资金
- New Energy and Industrial Technology Development Organization (NEDO)
- Ministry of Education, Culture, Sports, Science and Technology of Japan
- Grants-in-Aid for Scientific Research [22360007, 10J05257] Funding Source: KAKEN
Following the previous achievement of highly crystalline alpha-Ga2O3 thin films on c-plane sapphire, the growth of corundum-structured alpha-(AlxGa1-x)(2)O-3 was examined aiming at the future application of alpha-(AlxGa1-x)(2)O-3/Ga2O3 heterostructures to power devices and other functional devices. The results show the control of x and band gap up to 0.81 and 7.8 eV, respectively, maintaining the dominant corundum structure. The transmission electron microscope observation suggested the formation of the crystallographically good interface of alpha-(AlxGa1-x)(2)O-3/Ga2O3 without the severe generation of threading dislocation lines from the interface. (C) 2012 The Japan Society of Applied Physics
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