Electrical Conductive Corundum-Structured α-Ga2O3 Thin Films on Sapphire with Tin-Doping Grown by Spray-Assisted Mist Chemical Vapor Deposition

We report the fabrication of electrical conductive tin-doped alpha-Ga2O3 thin films on c-plane sapphire substrates. The mist chemical vapor deposition method brought tin-doped alpha-Ga2O3 thin films with high crystallinity without noticeable other phases, as highlighted by the full-width of X-ray diffraction omega-scan rocking curves as small as 40 arcsec, for the tin atomic density in the film upto similar to 10(20) cm(-3). The resistivity decreased by more doping of tin, and the alpha-Ga2O3 thin film with minimum resistivity exhibited n-type conductivity with the Hall mobility of 2.8 cm(2) V-1 s(-1) and the carrier density of 2.7 x 10(19) cm(-3). (C) 2012 The Japan Society of Applied Physics