Distribution of Phosphorus Atoms and Carrier Concentrations in Single-Crystal Silicon Doped by Catalytically Generated Phosphorous Radicals

标题
Distribution of Phosphorus Atoms and Carrier Concentrations in Single-Crystal Silicon Doped by Catalytically Generated Phosphorous Radicals
作者
关键词
-
出版物
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 51, Issue 6R, Pages 061301
出版商
Japan Society of Applied Physics
发表日期
2013-12-21
DOI
10.7567/jjap.51.061301

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