4.3 Article Proceedings Paper

Effect of Hydrogen on Carbon Nanowall Growth by Microwave Plasma-Enhanced Chemical Vapor Deposition

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IOP PUBLISHING LTD
DOI: 10.1143/JJAP.50.01AF08

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  1. Ministry of Education, Culture, Sports, Science and Technology, Japan (MEXT)

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The effect of hydrogen on the growth of carbon nanowalls (CNWs) with different hydrogen-to-carbon (H-2/CH4) flow ratios in chemical vapor deposition was investigated using scanning electron microscopy (SEM) and Raman spectroscopy. The CNWs were synthesized on catalyst-free substrates (Si or SiO2) by microwave plasma-enhanced chemical vapor deposition (MPECVD). At low H-2/CH4 flow rate ratios (0-2), the wall size increased with increasing H-2/CH4 flow rate ratio while the I-G/I-D remained constant; however, at high H-2/CH4 flow rate ratios (2-4), the wall size decreased and I-G/I-D increased with increasing H-2/CH4 flow rate ratios. This indicates that hydrogen plays different roles in the two ranges: reduction of nucleation density resulting in the larger CNWs for the former range and removal of amorphous carbon resulting in a higher I-G/I-D for the latter range. Note that the present growth method provides an extremely high growth rate of CNWs reaching 23 mu m/h. (C) 2011 The Japan Society of Applied Physics

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