Mechanism of Date Retention Improvement by High Temperature Annealing of Al2O3Blocking Layer in Flash Memory Device

标题
Mechanism of Date Retention Improvement by High Temperature Annealing of Al2O3Blocking Layer in Flash Memory Device
作者
关键词
-
出版物
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 50, Issue 4S, Pages 04DD07
出版商
Japan Society of Applied Physics
发表日期
2013-12-21
DOI
10.7567/jjap.50.04dd07

向作者/读者发起求助以获取更多资源

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More