Amorphous Indium Gallium Zinc Oxide Semiconductor Thin Film Transistors Using O2Plasma Treatment on the SiNxGate Insulator

标题
Amorphous Indium Gallium Zinc Oxide Semiconductor Thin Film Transistors Using O2Plasma Treatment on the SiNxGate Insulator
作者
关键词
-
出版物
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 49, Issue 8, Pages 08JF02
出版商
Japan Society of Applied Physics
发表日期
2010-08-20
DOI
10.1143/jjap.49.08jf02

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