Article
Energy & Fuels
Hasan Huseyin Canar, Gence Bektas, Rasit Turan
Summary: In this study, the optical, chemical, and electrical properties of SiNx and SiOxNy films prepared under different process conditions were experimentally analyzed. The C-V measurements showed that SiOxNy films have lower interface state density and fixed charge density than SiNx films. Additionally, calculations on the FTIR spectra indicated that SiNx films have a significantly higher hydrogen amount compared to SiOxNy films, which is important for reducing interface traps. The passivation results obtained from PCD measurement were explained using C-V and FTIR measurements for single SiNx, single SiOxNy, and their stack layers on p-type and n-type Si wafers. The results suggest that depositing a very thin SiOxNy layer with low Dit beneath SiNx layer with high Qf and H amount provides superior passivation on p-type and n-type Si wafers, and this passivation is further improved by a subsequent fast-firing process.
SOLAR ENERGY MATERIALS AND SOLAR CELLS
(2023)
Article
Nanoscience & Nanotechnology
Yongxia Li, Hui Qi, Jia Yu, Wenbo Han
Summary: In-situ synthesis of Mo-Si compound during spark plasma sintering can accelerate the nucleation of beta-Si3N4 grain, with a greater number of beta-Si3N4 grain nucleation obtained by decreasing the size of Mo particles. The addition of nano-sized Mo in Si3N4 ceramic composites leads to higher bending strength and fracture toughness primarily due to the elongated beta-Si3N4 grains obtained by more beta-Si3N4 grain nucleation.
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
(2021)
Article
Chemistry, Physical
Piu Rajak, Regina Ciancio, Antonio Caretta, Simone Laterza, Richa Bhardwaj, Matteo Jugovac, Marco Malvestuto, Paolo Moras, Roberto Flammini
Summary: We conducted a study on the sub-nanometer interlayer of crystalline silicon nitride at the Ni/Si interface, examining its role as a barrier against atom diffusion using transmission electron microscopy measurements and energy dispersive X-ray analysis. The results revealed that discontinuous silicide areas can be formed just below the nitride layer, with composition matching that of the nickel disilicide. This reaction between nickel and silicon is believed to be caused by thermal strain experienced by the interface during the deposition of nickel at low temperature.
APPLIED SURFACE SCIENCE
(2023)
Article
Chemistry, Multidisciplinary
Jiadong Yu, Zhibiao Hao, Jun Deng, Lai Wang, Yi Luo, Jian Wang, Changzheng Sun, Yanjun Han, Bing Xiong, Hongtao Li
Summary: Low-temperature growth of InGaN quantum wells on graphene/quartz substrates enables high internal quantum efficiency. The weak van der Waals interaction between graphene and nitride film allows successful release and transfer of the film.
CRYSTAL GROWTH & DESIGN
(2021)
Article
Chemistry, Physical
Xinyue Wang, Huijie Guo, Dawei Kang, Tonu Pullerits, Peng Song
Summary: The electric-field-dependent charge-separation dynamics of non-fullerene acceptors D/A heterojunctions were simulated using Marcus theory. The excited-state characteristics on the D/A interface showed differences under different electric-field intensities, providing microscopic details of the atomic-level non-fullerene D/A interface. The reorganization energy was found to mainly determine the charge-transfer rate, which showed variation depending on the electric-field intensity and was consistent with the Marcus inverted region. The charge separation exhibited significant advantages and the trifurcated structure of the molecule provided multiple charge transfer paths for charge separation.
JOURNAL OF MOLECULAR LIQUIDS
(2023)
Article
Materials Science, Multidisciplinary
Peng-cheng Li, Tao Wang, Rui-peng Guo, Qing-xue Huang, Xiao-ge Wang
Summary: The SPS technique has great potential for application in the design of Si3N4 materials with customized microstructures and properties. By examining different sintering temperatures, it was observed that the temperature gradient fields affected the transformation of the alpha-Si3N4 phase, resulting in gradient distribution of hardness and fracture toughness values in the prepared ceramics. Furthermore, when the sintering temperature exceeded 1800 degrees C, the hardness gradient reduced, possibly due to oxidation of silicon nitride.
Article
Materials Science, Ceramics
Guanghua Liu, Dan Wang, Yan Xing, Xiqiang Zhong, Wei Pan
Summary: Silicon nitride (Si3N4) is an excellent engineering ceramic with high strength, fracture toughness, wear resistance, and good chemical and thermal stability. The enhanced thermal conductivity enables Si3N4 to have potential application prospects in the electronic and orthopedic fields. A facile approach for the titanium-activated Cu bonding on Si3N4 substrates using an atmosphere plasma spray (APS) process is reported, which promotes the adhesion and high bonding strength of APS Cu on Si3N4.
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
(2023)
Article
Energy & Fuels
Ben M. Garland, Benjamin E. Davis, Nicholas C. Strandwitz
Summary: The impact of fixed interface charge on Schottky barrier height was investigated, and it was found that the fixed charge density and processing conditions have some influence on the barrier height, but other parameters also play a significant role. Further research is needed to reduce contact resistivity and explore other factors affecting the Schottky barrier height.
SOLAR ENERGY MATERIALS AND SOLAR CELLS
(2023)
Article
Chemistry, Physical
Jianan Wang, Xing Zhang, Hua Li, Constance Wang, Haoran Li, Stacia Keller, Umesh K. Mishra, Brett D. Nener, Giacinta Parish, Rob Atkin
Summary: The net surface charge of AlGaN/GaN structures is influenced by the pH-dependent protonation and deprotonation of surface hydroxyl groups and electron-deficient surface electronic states. AFM force measurements of ionic surfactant adsorption revealed varying surface properties of AlGaN with pH. Experimental findings show that the AlGaN surface charge changes with pH, being negatively charged at pH 12, neutral at pH 5.5, and positively charged at pH values below 5.5, with somewhat hydrophobic properties at acidic pH.
JOURNAL OF COLLOID AND INTERFACE SCIENCE
(2021)
Article
Materials Science, Coatings & Films
Haiyang Yu, Wenping Liang, Qiang Miao, Mengjuan Yin, Yaoyao Ma, Shiwei Zuo
Summary: This study focused on preparing a TaN gradient-modified layer on TA15 titanium alloy by RASP, which refined crystal sizes to the nanometer scale and facilitated adsorption and inward diffusion of Ta and N atoms. The pretreated TaN-modified layer demonstrated good wear resistance in ball-on-disc testing at 700 K, with a significantly reduced wear rate compared to untreated samples.
SURFACE & COATINGS TECHNOLOGY
(2021)
Article
Engineering, Electrical & Electronic
Co D. D. Pham, Tuyen B. B. Ly, Minh D. T. Dang, Khoi D. D. Tran, Nhi T. T. Vo, Tan M. M. Le, Nga H. N. Do, Phung K. K. Le
Summary: With the increasing demand for energy storage, scientists are paying more attention to finding durable and environmentally friendly materials for battery production. Black liquor from rice husk and rice straw have shown potential for use as anodic electrodes in lithium-ion batteries due to their high silica content. This study successfully extracted lignin-silica hybrids from black liquor derived from rice straw and achieved enhanced charge capacity and cycling stability for lithium battery anode production. It provides valuable progress in utilizing black liquors for environmental solutions and supporting energy storage technology.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2023)
Article
Multidisciplinary Sciences
Andrei A. Gismatulin, Gennadiy N. Kamaev, Vladimir N. Kruchinin, Vladimir A. Gritsenko, Oleg M. Orlov, Albert Chin
Summary: The study shows that the charge transport mechanism in silicon nitride-based memristors is different from traditional models, and reveals the charge transport mechanisms in different states. The charge transport in different states of the silicon nitride-based memristor can be described by the space charge limited current model.
SCIENTIFIC REPORTS
(2021)
Article
Chemistry, Physical
Rupak Thapa, Lauren M. Dorsett, Raja Sekhar Bale, Suhaib Malik, Stefan C. Wagner, Derrick Bailey, Jacob Stoehr, Anthony N. Caruso, Jeffery D. Bielefeld, Sean W. King, Michelle M. Paquette
Summary: Carborane (C2B10H12) molecules are unique precursors for self-assembled monolayer (SAM) applications. These 3D, icosahedral (12-vertex) molecules allow for well-ordered layers formation with fewer defects compared to traditional linear alkyl SAMs. Post-growth treatments like heat and plasma can be used to crosslink and stabilize the films. These carborane thiol SAMs show stability to thermal and plasma treatment, with some changes in boron coverage and oxidation. The films can be further stabilized and modified by plasma treatment and may have various applications in functional and protective layers.
JOURNAL OF PHYSICAL CHEMISTRY C
(2023)
Article
Chemistry, Multidisciplinary
Alex Henning, Johannes D. Bartl, Andreas Zeidler, Simon Qian, Oliver Bienek, Chang-Ming Jiang, Claudia Paulus, Bernhard Rieger, Martin Stutzmann, Ian D. Sharp
Summary: Atomic layer deposition (ALD) is a crucial tool in semiconductor device fabrication for precise control over thin film growth. However, challenges in creating continuous monolayers exist due to surface inhomogeneities and precursor steric interactions. This study demonstrates the encapsulation of c-plane gallium nitride with extremely thin aluminum oxide through ALD, offering new possibilities for controlling charge transport and tailoring surface chemistry in semiconductor devices.
ADVANCED FUNCTIONAL MATERIALS
(2021)
Article
Physics, Multidisciplinary
Haofan Yang, Jing Xu, Zhongfei Xiong, Xinda Lu, Ruo-Yang Zhang, Hanghang Li, Yuntian Chen, Shuang Zhang
Summary: The scattering immune propagation of light in topological photonic systems may revolutionize the design of integrated photonic circuits for information processing and communications. The spin-valley Hall effect (SVHE) is proposed as a way to expand topologically protected edge channels and enhance information multiplexing. An experimentally feasible platform based on coupled ring resonators mediated by optical Kerr nonlinearity is suggested to realize SVHE for light and achieve spin-valley photonics in optical communication systems.
PHYSICAL REVIEW LETTERS
(2021)