Characteristics of Enzyme-Based ZnO/Zn0.7Mg0.3O Heterojunction Field-Effect Transistor as Glucose Sensor

The characteristics of an enzyme-based ZnO/Zn0.7Mg0.3O heterojunction field-effect transistor (HFET) for glucose sensing are reported. The enzyme glucose oxidase (GOD) was immobilized on an amine-modified gate electrode of the ZnO/Zn0.7Mg0.3O HIFET, and glucose sensing was performed by detecting biocatalytically yielded protons using an ion-sensitive function of the gate electrode. The chemical bonding states of the amine-modified and GOD-immobilized surfaces were analyzed by X-ray photoemission spectroscopy, and the enzyme activity of GOD was examined by a colorimetric method. In agreement with the promising results of these experiments, this enzyme-based HFET exhibited stable sensing performance with a linear response in a wide range of glucose concentrations from 0 to 4 mg-cm(-3) and at a short time constant less than 20s. (c) 2009 The Japan Society of Applied Physics