Performance and Stability Characterization of Bottom Gated Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Grown by RF and DC Sputtering

标题
Performance and Stability Characterization of Bottom Gated Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Grown by RF and DC Sputtering
作者
关键词
-
出版物
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 48, Issue 4, Pages 04C134
出版商
Japan Society of Applied Physics
发表日期
2009-04-20
DOI
10.1143/jjap.48.04c134

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